Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB60R080P7ATMA1
Manufacturer Part Number | IPB60R080P7ATMA1 |
---|---|
Future Part Number | FT-IPB60R080P7ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ P7 |
IPB60R080P7ATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 11.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 129W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB60R080P7ATMA1 Weight | Contact Us |
Replacement Part Number | IPB60R080P7ATMA1-FT |
IPB06N03LA G
Infineon Technologies
IPB06N03LAT
Infineon Technologies
IPB06N03LB
Infineon Technologies
IPB06N03LB G
Infineon Technologies
IPB070N06L G
Infineon Technologies
IPB072N15N3GE8187ATMA1
Infineon Technologies
IPB073N15N5ATMA1
Infineon Technologies
IPB075N04LGATMA1
Infineon Technologies
IPB080N06N G
Infineon Technologies
IPB083N10N3GATMA1
Infineon Technologies
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel