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Infineon Technologies IPB120N06S4H1ATMA2

Name: IPB120N06S4H1ATMA2
Brand: Infineon Technologies
SKU: IPB120N06S4H1ATMA2
Price: 1.264528 USD
Availability: InStock
Rating: 4.9 (225 reviews)

MFG Part Number: IPB120N06S4H1ATMA2

Available Quantity: 18520 Pieces

Reference Price: USD 1.264528

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET N-CH 60V 120A TO263-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB120N06S4H1ATMA2.pdf

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IPB120N06S4H1ATMA2 Specifications

Manufacturer Part Number	IPB120N06S4H1ATMA2
Future Part Number	FT-IPB120N06S4H1ATMA2
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IPB120N06S4H1ATMA2 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	21900pF @ 25V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB120N06S4H1ATMA2 Weight	Contact Us
Replacement Part Number	IPB120N06S4H1ATMA2-FT

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