Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB029N06N3GE8187ATMA1
Manufacturer Part Number | IPB029N06N3GE8187ATMA1 |
---|---|
Future Part Number | FT-IPB029N06N3GE8187ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB029N06N3GE8187ATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 118µA |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 188W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB029N06N3GE8187ATMA1 Weight | Contact Us |
Replacement Part Number | IPB029N06N3GE8187ATMA1-FT |
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