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Infineon Technologies IPB029N06N3GE8187ATMA1

MFG Part Number
IPB029N06N3GE8187ATMA1
Available Quantity
98830 Pieces
Reference Price
USD 0.853648
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 60V 120A TO263-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPB029N06N3GE8187ATMA1.pdf
IPB029N06N3GE8187ATMA1 Image

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IPB029N06N3GE8187ATMA1 Specifications

Manufacturer Part Number IPB029N06N3GE8187ATMA1
Future Part Number FT-IPB029N06N3GE8187ATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
IPB029N06N3GE8187ATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPB029N06N3GE8187ATMA1 Weight Contact Us
Replacement Part Number IPB029N06N3GE8187ATMA1-FT

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