Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA10JT12-247
Manufacturer Part Number | GA10JT12-247 |
---|---|
Future Part Number | FT-GA10JT12-247 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GA10JT12-247 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 10A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AB |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GA10JT12-247 Weight | Contact Us |
Replacement Part Number | GA10JT12-247-FT |
IAUT150N10S5N035ATMA1
Infineon Technologies
IAUT165N08S5N029ATMA2
Infineon Technologies
IAUT200N08S5N023ATMA1
Infineon Technologies
IAUT240N08S5N019ATMA1
Infineon Technologies
IAUT260N10S5N019ATMA1
Infineon Technologies
IAUT300N08S5N012ATMA2
Infineon Technologies
IAUT300N08S5N014ATMA1
Infineon Technologies
IPLU250N04S41R7XTMA1
Infineon Technologies
IPLU300N04S41R1XTMA1
Infineon Technologies
IPLU300N04S4R7XTMA2
Infineon Technologies
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel