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Infineon Technologies IAUT165N08S5N029ATMA2

Name: IAUT165N08S5N029ATMA2
Brand: Infineon Technologies
SKU: IAUT165N08S5N029ATMA2
Price: 1.510168 USD
Availability: InStock
Rating: 4.7 (256 reviews)

MFG Part Number: IAUT165N08S5N029ATMA2

Available Quantity: 49160 Pieces

Reference Price: USD 1.510168

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 165A 80V 120V 8HSOF

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IAUT165N08S5N029ATMA2.pdf

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IAUT165N08S5N029ATMA2 Specifications

Manufacturer Part Number	IAUT165N08S5N029ATMA2
Future Part Number	FT-IAUT165N08S5N029ATMA2
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IAUT165N08S5N029ATMA2 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6370pF @ 40V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IAUT165N08S5N029ATMA2 Weight	Contact Us
Replacement Part Number	IAUT165N08S5N029ATMA2-FT

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