Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA08JT17-247
Manufacturer Part Number | GA08JT17-247 |
---|---|
Future Part Number | FT-GA08JT17-247 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GA08JT17-247 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1700V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (90°C) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 8A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AB |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GA08JT17-247 Weight | Contact Us |
Replacement Part Number | GA08JT17-247-FT |
IPT015N10N5ATMA1
Infineon Technologies
IPT004N03LATMA1
Infineon Technologies
IAUT300N10S5N015ATMA1
Infineon Technologies
IPLU300N04S4R8XTMA1
Infineon Technologies
IPT012N08N5ATMA1
Infineon Technologies
IRL40T209ATMA1
Infineon Technologies
IAUT150N10S5N035ATMA1
Infineon Technologies
IAUT165N08S5N029ATMA2
Infineon Technologies
IAUT200N08S5N023ATMA1
Infineon Technologies
IAUT240N08S5N019ATMA1
Infineon Technologies
LFEC3E-4T144C
Lattice Semiconductor Corporation
A42MX24-3PQ208
Microsemi Corporation
5SGXMA9N3F45I3N
Intel
XCS40-4BG256C
Xilinx Inc.
XC6SLX16-3CSG324C
Xilinx Inc.
APA750-FGG676I
Microsemi Corporation
LFXP2-8E-6FTN256I
Lattice Semiconductor Corporation
LFX125EB-03F256I
Lattice Semiconductor Corporation
LFEC33E-3FN484C
Lattice Semiconductor Corporation
5CGXFC3B7U15C8N
Intel