Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQI7N10LTU
Manufacturer Part Number | FQI7N10LTU |
---|---|
Future Part Number | FT-FQI7N10LTU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQI7N10LTU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 3.65A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQI7N10LTU Weight | Contact Us |
Replacement Part Number | FQI7N10LTU-FT |
IRLH5034TR2PBF
Infineon Technologies
IRLH5034TRPBF
Infineon Technologies
IRLH5036TR2PBF
Infineon Technologies
IRLH5036TRPBF
Infineon Technologies
HTNFET-T
Honeywell Aerospace
GA08JT17-247
GeneSiC Semiconductor
GA04JT17-247
GeneSiC Semiconductor
GA50JT12-247
GeneSiC Semiconductor
GA03JT12-247
GeneSiC Semiconductor
GA05JT12-247
GeneSiC Semiconductor
XC6SLX150T-2CSG484I
Xilinx Inc.
M2GL010-FGG484I
Microsemi Corporation
A54SX32A-CQ256M
Microsemi Corporation
A3PN250-2VQ100
Microsemi Corporation
5SGXEA5K2F40I3L
Intel
5SGXMA9N2F45C2LN
Intel
XC7VX690T-1FF1157I
Xilinx Inc.
XC4VLX160-10FF1148C
Xilinx Inc.
XC2V8000-4FFG1152I
Xilinx Inc.
XC2V1500-5FF896I
Xilinx Inc.