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FQD19N10TM_F080 Image

ON Semiconductor FQD19N10TM_F080

MFG Part Number
FQD19N10TM_F080
Available Quantity
92830 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
ON Semiconductor
Brief Description
QFET® MOSFET N-CH 100V 15.6A DPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
FQD19N10TM_F080.pdf
FQD19N10TM_F080 Image

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FQD19N10TM_F080 Specifications

Manufacturer Part Number FQD19N10TM_F080
Future Part Number FT-FQD19N10TM_F080
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series QFET®
FQD19N10TM_F080 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
FQD19N10TM_F080 Weight Contact Us
Replacement Part Number FQD19N10TM_F080-FT

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