Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCD4N60TF
Manufacturer Part Number | FCD4N60TF |
---|---|
Future Part Number | FT-FCD4N60TF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SuperFET™ |
FCD4N60TF Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCD4N60TF Weight | Contact Us |
Replacement Part Number | FCD4N60TF-FT |
HUF76609D3ST
ON Semiconductor
RFD16N05LSM9A
ON Semiconductor
2SJ377(TE16R1,NQ)
Toshiba Semiconductor and Storage
2SJ610(TE16L1,NQ)
Toshiba Semiconductor and Storage
2SJ687-ZK-E1-AY
Renesas Electronics America
2SK2231(TE16R1,NQ)
Toshiba Semiconductor and Storage
2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
2SK2993(TE24L,Q)
Toshiba Semiconductor and Storage
XC6SLX100T-N3FG900C
Xilinx Inc.
M2GL050TS-1FGG484I
Microsemi Corporation
EP2A40F672C7
Intel
EP3SL200F1517C4
Intel
XC7A200T-2FB484I
Xilinx Inc.
XC6VCX195T-1FFG1156I
Xilinx Inc.
LFEC33E-3FN484C
Lattice Semiconductor Corporation
EPF10K10LC84-4
Intel
EPF81188ARC240-2
Intel
EP1C12Q240C7
Intel