Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / FMA4AT148
Manufacturer Part Number | FMA4AT148 |
---|---|
Future Part Number | FT-FMA4AT148 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FMA4AT148 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | SMT5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FMA4AT148 Weight | Contact Us |
Replacement Part Number | FMA4AT148-FT |
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1706JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2706JE(TE85L,F)
Toshiba Semiconductor and Storage