Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1706JE(TE85L,F)
Manufacturer Part Number | RN1706JE(TE85L,F) |
---|---|
Future Part Number | FT-RN1706JE(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1706JE(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1706JE(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN1706JE(TE85L,F)-FT |
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