Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMH25FHAT2R
Manufacturer Part Number | EMH25FHAT2R |
---|---|
Future Part Number | FT-EMH25FHAT2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
EMH25FHAT2R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMH25FHAT2R Weight | Contact Us |
Replacement Part Number | EMH25FHAT2R-FT |
RN2911,LF
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN4904,LF
Toshiba Semiconductor and Storage
RN4910,LF
Toshiba Semiconductor and Storage
RN4990(T5L,F,T)
Toshiba Semiconductor and Storage
RN4991(T5L,F,T)
Toshiba Semiconductor and Storage
RN4981,LF(CT
Toshiba Semiconductor and Storage
RN1902,LF(CT
Toshiba Semiconductor and Storage
RN1904,LF(CT
Toshiba Semiconductor and Storage
RN1905,LF(CT
Toshiba Semiconductor and Storage