Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMH1FHAT2R
Manufacturer Part Number | EMH1FHAT2R |
---|---|
Future Part Number | FT-EMH1FHAT2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
EMH1FHAT2R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMH1FHAT2R Weight | Contact Us |
Replacement Part Number | EMH1FHAT2R-FT |
RN2906,LF
Toshiba Semiconductor and Storage
RN2911,LF
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN4904,LF
Toshiba Semiconductor and Storage
RN4910,LF
Toshiba Semiconductor and Storage
RN4990(T5L,F,T)
Toshiba Semiconductor and Storage
RN4991(T5L,F,T)
Toshiba Semiconductor and Storage
RN4981,LF(CT
Toshiba Semiconductor and Storage
RN1902,LF(CT
Toshiba Semiconductor and Storage
RN1904,LF(CT
Toshiba Semiconductor and Storage
AGLN015V2-QNG68I
Microsemi Corporation
AFS1500-2FG484I
Microsemi Corporation
M1AGL1000V2-FGG484I
Microsemi Corporation
EP1S20F484C6
Intel
A1020B-1PL44I
Microsemi Corporation
XC7K410T-1FF900I
Xilinx Inc.
A54SX08A-2FGG144
Microsemi Corporation
AGL250V2-FGG144I
Microsemi Corporation
10AX090N4F45I3SG
Intel
EP1S30F1020C7
Intel