Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMA11T2R
Manufacturer Part Number | EMA11T2R |
---|---|
Future Part Number | FT-EMA11T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMA11T2R Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package | EMT5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMA11T2R Weight | Contact Us |
Replacement Part Number | EMA11T2R-FT |
RN4909(T5L,F,T)
Toshiba Semiconductor and Storage
RN4910(T5L,F,T)
Toshiba Semiconductor and Storage
RN4911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4984(T5L,F,T)
Toshiba Semiconductor and Storage
RN4986(T5L,F,T)
Toshiba Semiconductor and Storage
RN4988(T5L,F,T)
Toshiba Semiconductor and Storage
RN4989(T5L,F,T)
Toshiba Semiconductor and Storage
RN49A1(T5L,F,T)
Toshiba Semiconductor and Storage
RN2702TE85LF
Toshiba Semiconductor and Storage
RN2711(TE85L,F)
Toshiba Semiconductor and Storage
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
AX125-FG256
Microsemi Corporation
5CGXFC9D6F27C7N
Intel
5SGXEA7N2F40C1
Intel
5SGXEA7H1F35I2N
Intel
XC5VLX50T-1FF665C
Xilinx Inc.
XC7K355T-1FF901I
Xilinx Inc.
LFE2M20SE-6F256C
Lattice Semiconductor Corporation
5CEFA5M13C8N
Intel
EP2A40F1020C8
Intel