Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2711(TE85L,F)
Manufacturer Part Number | RN2711(TE85L,F) |
---|---|
Future Part Number | FT-RN2711(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2711(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package | USV |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2711(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN2711(TE85L,F)-FT |
RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
AT6002ALV-4AC
Microchip Technology
EP1K50TC144-3
Intel
LFXP3E-3T144C
Lattice Semiconductor Corporation
A3PN060-Z1VQG100
Microsemi Corporation
5SGXEB5R2F43I3LN
Intel
XC7K410T-3FBG900E
Xilinx Inc.
XC7A75T-2CSG324I
Xilinx Inc.
A54SX32A-FGG144I
Microsemi Corporation
LFE3-150EA-6LFN1156I
Lattice Semiconductor Corporation
EP2S90F1508C5N
Intel