Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / DME20B010R
Manufacturer Part Number | DME20B010R |
---|---|
Future Part Number | FT-DME20B010R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DME20B010R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN, PNP Complementary Darlington |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Power - Max | 300mW |
Frequency - Transition | 150MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | Mini5-G3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DME20B010R Weight | Contact Us |
Replacement Part Number | DME20B010R-FT |
US6X8TR
Rohm Semiconductor
QST8TR
Rohm Semiconductor
QS6Z5TR
Rohm Semiconductor
QST9TR
Rohm Semiconductor
QSX7TR
Rohm Semiconductor
QSX8TR
Rohm Semiconductor
QS5W1TR
Rohm Semiconductor
QS5W2TR
Rohm Semiconductor
QS5Y1TR
Rohm Semiconductor
QSZ1TR
Rohm Semiconductor
A3PN010-QNG48
Microsemi Corporation
APA150-FG256I
Microsemi Corporation
LFE5UM-45F-6BG554C
Lattice Semiconductor Corporation
EP2S60F672C4
Intel
5AGXMA1D4F27C4N
Intel
5SGXMB6R2F43C2N
Intel
EP4S40G5H40I2N
Intel
A3P250L-FGG144I
Microsemi Corporation
10AX115N4F45I3SGES
Intel
EPF10K50SQC240-1
Intel