Manufacturer Part Number | QS5Y1TR |
---|---|
Future Part Number | FT-QS5Y1TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
QS5Y1TR Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN, PNP (Emitter Coupled) |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Power - Max | 1.25W |
Frequency - Transition | 300MHz, 270MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-5 Thin, TSOT-23-5 |
Supplier Device Package | TSMT5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
QS5Y1TR Weight | Contact Us |
Replacement Part Number | QS5Y1TR-FT |
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
LFXP2-8E-7TN144C
Lattice Semiconductor Corporation
A54SX32A-1TQ144I
Microsemi Corporation
XC7S50-1FTGB196I
Xilinx Inc.
A3P600L-1FG256
Microsemi Corporation
10M16DAF256I7G
Intel
5SGSMD3E3H29I4N
Intel
A40MX04-1PL44I
Microsemi Corporation
LFX200EB-04F256C
Lattice Semiconductor Corporation
LFEC10E-3FN484I
Lattice Semiconductor Corporation
5CEBA5F23C7N
Intel