Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / DME201010R
Manufacturer Part Number | DME201010R |
---|---|
Future Part Number | FT-DME201010R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DME201010R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN, PNP (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Power - Max | 300mW |
Frequency - Transition | 150MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | Mini5-G3-B |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DME201010R Weight | Contact Us |
Replacement Part Number | DME201010R-FT |
US6X7TR
Rohm Semiconductor
US6X8TR
Rohm Semiconductor
QST8TR
Rohm Semiconductor
QS6Z5TR
Rohm Semiconductor
QST9TR
Rohm Semiconductor
QSX7TR
Rohm Semiconductor
QSX8TR
Rohm Semiconductor
QS5W1TR
Rohm Semiconductor
QS5W2TR
Rohm Semiconductor
QS5Y1TR
Rohm Semiconductor
XC6SLX9-2TQG144I
Xilinx Inc.
XC3S400-5FT256C
Xilinx Inc.
M2GL090TS-FCSG325I
Microsemi Corporation
A42MX36-3BG272I
Microsemi Corporation
A3P600-1FG256
Microsemi Corporation
LCMXO2-4000ZE-3QN84C
Lattice Semiconductor Corporation
10CL040YF484I7G
Intel
5SGXMA5N1F40C1N
Intel
M1AGL250V2-FG144
Microsemi Corporation
EP20K160EQC208-1X
Intel