Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTB122TC-7
Manufacturer Part Number | DDTB122TC-7 |
---|---|
Future Part Number | FT-DDTB122TC-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DDTB122TC-7 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 220 Ohms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DDTB122TC-7 Weight | Contact Us |
Replacement Part Number | DDTB122TC-7-FT |
BCR 198L3 E6327
Infineon Technologies
BCR 199L3 E6327
Infineon Technologies
BCR 103F E6327
Infineon Technologies
BCR 108F E6327
Infineon Technologies
BCR 112F E6327
Infineon Technologies
BCR 114F E6327
Infineon Technologies
BCR 116F E6327
Infineon Technologies
BCR 119F E6327
Infineon Technologies
BCR 129F E6327
Infineon Technologies
BCR 133F B6327
Infineon Technologies