Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR 133F B6327
Manufacturer Part Number | BCR 133F B6327 |
---|---|
Future Part Number | FT-BCR 133F B6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR 133F B6327 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 130MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | PG-TSFP-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR 133F B6327 Weight | Contact Us |
Replacement Part Number | BCR 133F B6327-FT |
PDTC115EMB,315
Nexperia USA Inc.
PDTC115TMB,315
Nexperia USA Inc.
PDTC123EMB,315
Nexperia USA Inc.
PDTC123JMB,315
Nexperia USA Inc.
PDTC123TMB,315
Nexperia USA Inc.
PDTC123YMB,315
Nexperia USA Inc.
PDTC124EMB,315
Nexperia USA Inc.
PDTC124TMB,315
Nexperia USA Inc.
PDTC124XMB,315
Nexperia USA Inc.
PDTC143EMB,315
Nexperia USA Inc.
LFE2-12E-6TN144I
Lattice Semiconductor Corporation
LFE2-12E-5TN144C
Lattice Semiconductor Corporation
XC6SLX75T-3CSG484I
Xilinx Inc.
AFS600-1FG484
Microsemi Corporation
EPF10K250EFC672-1
Intel
5SGSMD3E2H29I3LN
Intel
5SGSMD4E2H29I3L
Intel
5SGXMA7H2F35C2LN
Intel
EP3SE110F1152C2N
Intel
EPF10K30EQI208-2N
Intel