Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CSD25211W1015
Manufacturer Part Number | CSD25211W1015 |
---|---|
Future Part Number | FT-CSD25211W1015 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | NexFET™ |
CSD25211W1015 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
Vgs (Max) | -6V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Package / Case | 6-UFBGA, DSBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD25211W1015 Weight | Contact Us |
Replacement Part Number | CSD25211W1015-FT |
TPH5200FNH,L1Q
Toshiba Semiconductor and Storage
TPH6R003NL,LQ
Toshiba Semiconductor and Storage
TPH7R006PL,L1Q
Toshiba Semiconductor and Storage
TPH8R008NH,L1Q
Toshiba Semiconductor and Storage
TPH8R903NL,LQ
Toshiba Semiconductor and Storage
TPHR8504PL,L1Q
Toshiba Semiconductor and Storage
TPN1110ENH,L1Q
Toshiba Semiconductor and Storage
SSM6K781G,LF
Toshiba Semiconductor and Storage
SSM6J771G,LF
Toshiba Semiconductor and Storage
SSM6H19NU,LF
Toshiba Semiconductor and Storage
A3P015-1QNG68
Microsemi Corporation
5SGXMA7N1F40C2N
Intel
5SGXEA7N1F45I2N
Intel
5SGXMB5R1F43C1N
Intel
EP4CGX15BF14I7N
Intel
XC6VLX195T-1FFG784I
Xilinx Inc.
XC2VP7-6FF672I
Xilinx Inc.
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4FG484I
Lattice Semiconductor Corporation
EP4SGX70HF35I3N
Intel