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TPN1110ENH,L1Q Image

Toshiba Semiconductor and Storage TPN1110ENH,L1Q

MFG Part Number
TPN1110ENH,L1Q
Available Quantity
57280 Pieces
Reference Price
USD 0.49504
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
U-MOSVIII-H MOSFET N-CH 200V 7.2A 8TSON
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TPN1110ENH,L1Q.pdf
TPN1110ENH,L1Q Image

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TPN1110ENH,L1Q Specifications

Manufacturer Part Number TPN1110ENH,L1Q
Future Part Number FT-TPN1110ENH,L1Q
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series U-MOSVIII-H
TPN1110ENH,L1Q Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TPN1110ENH,L1Q Weight Contact Us
Replacement Part Number TPN1110ENH,L1Q-FT

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