Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BUJ105A,127
Manufacturer Part Number | BUJ105A,127 |
---|---|
Future Part Number | FT-BUJ105A,127 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BUJ105A,127 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 4A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 13 @ 500mA, 5V |
Power - Max | 80W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BUJ105A,127 Weight | Contact Us |
Replacement Part Number | BUJ105A,127-FT |
MJ11032G
ON Semiconductor
2N3055G
ON Semiconductor
2N5038G
ON Semiconductor
MJ11028G
ON Semiconductor
MJ15003G
ON Semiconductor
2N6341G
ON Semiconductor
MJ15023G
ON Semiconductor
MJ15025G
ON Semiconductor
MJ802G
ON Semiconductor
MJ11022G
ON Semiconductor
A54SX32A-FTQ144
Microsemi Corporation
LCMXO2280E-3TN100I
Lattice Semiconductor Corporation
LCMXO1200E-4FT256C
Lattice Semiconductor Corporation
EP2AGZ300HF40I4N
Intel
EP3SE260H780C3N
Intel
5SGXEA4H1F35I2N
Intel
XC5VSX35T-2FF665I
Xilinx Inc.
M2GL060TS-1FGG676
Microsemi Corporation
LFE2-70E-6F672C
Lattice Semiconductor Corporation
LCMXO2-7000HE-5BG332I
Lattice Semiconductor Corporation