Manufacturer Part Number | 2N6341G |
---|---|
Future Part Number | FT-2N6341G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N6341G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 25A |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
Current - Collector Cutoff (Max) | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
Power - Max | 200W |
Frequency - Transition | 40MHz |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-204 (TO-3) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N6341G Weight | Contact Us |
Replacement Part Number | 2N6341G-FT |
2N6039G
ON Semiconductor
BD678G
ON Semiconductor
BD682G
ON Semiconductor
BD675G
ON Semiconductor
MJE340G
ON Semiconductor
2N4923G
ON Semiconductor
MJE350G
ON Semiconductor
BD677AG
ON Semiconductor
MJE182G
ON Semiconductor
BD234G
ON Semiconductor
A54SX08-TQ144
Microsemi Corporation
5SEE9F45C2N
Intel
5SGXMA7H2F35C3
Intel
EP2SGX90EF1152I4
Intel
XC7K160T-2FBG484C
Xilinx Inc.
XC4VLX15-12FFG676C
Xilinx Inc.
A3PE1500-1FGG676
Microsemi Corporation
LFXP2-17E-6QN208C
Lattice Semiconductor Corporation
10AX115R3F40E2SG
Intel
10AX022E3F29I1HG
Intel