Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC240N12NS3 G
Manufacturer Part Number | BSC240N12NS3 G |
---|---|
Future Part Number | FT-BSC240N12NS3 G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC240N12NS3 G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id | 4V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 60V |
FET Feature | - |
Power Dissipation (Max) | 66W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC240N12NS3 G Weight | Contact Us |
Replacement Part Number | BSC240N12NS3 G-FT |
BSC022N04LSATMA1
Infineon Technologies
BSC024N025S G
Infineon Technologies
BSC025N03LSGATMA1
Infineon Technologies
BSC026N02KSGAUMA1
Infineon Technologies
BSC026N04LSATMA1
Infineon Technologies
BSC026N08NS5ATMA1
Infineon Technologies
BSC027N03S G
Infineon Technologies
BSC027N06LS5ATMA1
Infineon Technologies
BSC028N06LS3GATMA1
Infineon Technologies
BSC028N06NSATMA1
Infineon Technologies
EX128-TQ100
Microsemi Corporation
XC3S50A-4VQG100I
Xilinx Inc.
A54SX32A-1CQ256
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
A42MX16-VQG100M
Microsemi Corporation
EP1SGX10CF672C7N
Intel
10AX016C3U19I2LG
Intel
10CL025ZE144I8G
Intel
5SGXEA7H3F35I4
Intel
EP3SE50F780I3
Intel