Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC205N10LS G
Manufacturer Part Number | BSC205N10LS G |
---|---|
Future Part Number | FT-BSC205N10LS G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC205N10LS G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 43µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 76W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC205N10LS G Weight | Contact Us |
Replacement Part Number | BSC205N10LS G-FT |
BSC022N03S
Infineon Technologies
BSC022N03SG
Infineon Technologies
BSC022N04LSATMA1
Infineon Technologies
BSC024N025S G
Infineon Technologies
BSC025N03LSGATMA1
Infineon Technologies
BSC026N02KSGAUMA1
Infineon Technologies
BSC026N04LSATMA1
Infineon Technologies
BSC026N08NS5ATMA1
Infineon Technologies
BSC027N03S G
Infineon Technologies
BSC027N06LS5ATMA1
Infineon Technologies