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Infineon Technologies BSC196N10NSGATMA1

MFG Part Number
BSC196N10NSGATMA1
Available Quantity
49330 Pieces
Reference Price
USD 0.385416
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 100V 45A TDSON-8
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
BSC196N10NSGATMA1.pdf
BSC196N10NSGATMA1 Image

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BSC196N10NSGATMA1 Specifications

Manufacturer Part Number BSC196N10NSGATMA1
Future Part Number FT-BSC196N10NSGATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
BSC196N10NSGATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19.6 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
BSC196N10NSGATMA1 Weight Contact Us
Replacement Part Number BSC196N10NSGATMA1-FT

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