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Infineon Technologies BSC190N12NS3GATMA1

Name: BSC190N12NS3GATMA1
Brand: Infineon Technologies
SKU: BSC190N12NS3GATMA1
Price: 0.61624 USD
Availability: InStock
Rating: 4.9 (39 reviews)

MFG Part Number: BSC190N12NS3GATMA1

Available Quantity: 77600 Pieces

Reference Price: USD 0.61624

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 120V 44A TDSON-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSC190N12NS3GATMA1.pdf

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BSC190N12NS3GATMA1 Specifications

Manufacturer Part Number	BSC190N12NS3GATMA1
Future Part Number	FT-BSC190N12NS3GATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSC190N12NS3GATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	8.6A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id	4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 60V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSC190N12NS3GATMA1 Weight	Contact Us
Replacement Part Number	BSC190N12NS3GATMA1-FT

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