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Infineon Technologies BSC12DN20NS3GATMA1

MFG Part Number
BSC12DN20NS3GATMA1
Available Quantity
44550 Pieces
Reference Price
USD 0.416664
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 200V 11.3A 8TDSON
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
BSC12DN20NS3GATMA1.pdf
BSC12DN20NS3GATMA1 Image

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BSC12DN20NS3GATMA1 Specifications

Manufacturer Part Number BSC12DN20NS3GATMA1
Future Part Number FT-BSC12DN20NS3GATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
BSC12DN20NS3GATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
BSC12DN20NS3GATMA1 Weight Contact Us
Replacement Part Number BSC12DN20NS3GATMA1-FT

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