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Infineon Technologies IPC50N04S55R8ATMA1

Name: IPC50N04S55R8ATMA1
Brand: Infineon Technologies
SKU: IPC50N04S55R8ATMA1
Price: 0.228568 USD
Availability: InStock
Rating: 4.5 (295 reviews)

MFG Part Number: IPC50N04S55R8ATMA1

Available Quantity: 16530 Pieces

Reference Price: USD 0.228568

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CHANNEL 40V 50A 8TDSON

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPC50N04S55R8ATMA1.pdf

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IPC50N04S55R8ATMA1 Specifications

Manufacturer Part Number	IPC50N04S55R8ATMA1
Future Part Number	FT-IPC50N04S55R8ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPC50N04S55R8ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	5.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1090pF @ 25V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-33
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPC50N04S55R8ATMA1 Weight	Contact Us
Replacement Part Number	IPC50N04S55R8ATMA1-FT

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