Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFH5302DTR2PBF
Manufacturer Part Number | IRFH5302DTR2PBF |
---|---|
Future Part Number | FT-IRFH5302DTR2PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRFH5302DTR2PBF Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3635pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) Single Die |
Package / Case | 8-PowerVDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFH5302DTR2PBF Weight | Contact Us |
Replacement Part Number | IRFH5302DTR2PBF-FT |
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