Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR 139L3 E6327
Manufacturer Part Number | BCR 139L3 E6327 |
---|---|
Future Part Number | FT-BCR 139L3 E6327 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR 139L3 E6327 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | PG-TSLP-3-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR 139L3 E6327 Weight | Contact Us |
Replacement Part Number | BCR 139L3 E6327-FT |
PDTC143ZE,115
NXP USA Inc.
PDTC144EE,115
NXP USA Inc.
PDTC144EE,135
NXP USA Inc.
PDTC144TE,115
NXP USA Inc.
PDTC144VE,115
NXP USA Inc.
PDTC144WE,115
NXP USA Inc.
PDTA113EMB,315
Nexperia USA Inc.
PDTA113ZMB,315
Nexperia USA Inc.
PDTA114EMB,315
Nexperia USA Inc.
PDTA114TMB,315
Nexperia USA Inc.
XC2VP2-6FG456C
Xilinx Inc.
A42MX36-BGG272I
Microsemi Corporation
A54SX72A-FFG484
Microsemi Corporation
P1AFS600-2FG256I
Microsemi Corporation
EP4SGX360KF40C3
Intel
XC5VLX110T-1FFG1738CES
Xilinx Inc.
XC7VX690T-3FFG1930E
Xilinx Inc.
A54SX32A-BG329M
Microsemi Corporation
LFXP2-5E-5MN132C
Lattice Semiconductor Corporation
EP2SGX90FF1508I4
Intel