Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTC123YMB,315
Manufacturer Part Number | PDTC123YMB,315 |
---|---|
Future Part Number | FT-PDTC123YMB,315 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTC123YMB,315 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | DFN1006B-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTC123YMB,315 Weight | Contact Us |
Replacement Part Number | PDTC123YMB,315-FT |
PDTA143ZM,315
Nexperia USA Inc.
PDTA144EM,315
Nexperia USA Inc.
PDTA144TM,315
Nexperia USA Inc.
PDTA144VM,315
Nexperia USA Inc.
PDTA144WM,315
Nexperia USA Inc.
PDTC114EM,315
Nexperia USA Inc.
PDTC114TM,315
Nexperia USA Inc.
PDTC114YM,315
Nexperia USA Inc.
PDTC115EM,315
Nexperia USA Inc.
PDTC115TM,315
Nexperia USA Inc.
A3P030-1QNG68
Microsemi Corporation
M2GL050S-1FGG484I
Microsemi Corporation
LFE2-70E-5F900I
Lattice Semiconductor Corporation
10M50DAF256C6GES
Intel
5SGSMD4K3F40I3N
Intel
XC7VX415T-3FFG1157E
Xilinx Inc.
XC6VLX550T-2FFG1760C
Xilinx Inc.
LCMXO2-4000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
EP20K100EQC240-1N
Intel