Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT25GP120BDQ1G

| Manufacturer Part Number | APT25GP120BDQ1G |
|---|---|
| Future Part Number | FT-APT25GP120BDQ1G |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | POWER MOS 7® |
| APT25GP120BDQ1G Status (Lifecycle) | In Stock |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 69A |
| Current - Collector Pulsed (Icm) | 90A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| Power - Max | 417W |
| Switching Energy | 500µJ (on), 440µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 12ns/70ns |
| Test Condition | 600V, 25A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| APT25GP120BDQ1G Weight | Contact Us |
| Replacement Part Number | APT25GP120BDQ1G-FT |

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