Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 2SC5415AE-TD-E
Manufacturer Part Number | 2SC5415AE-TD-E |
---|---|
Future Part Number | FT-2SC5415AE-TD-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SC5415AE-TD-E Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 6.7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 9dB |
Power - Max | 800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PCP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC5415AE-TD-E Weight | Contact Us |
Replacement Part Number | 2SC5415AE-TD-E-FT |
MRF5812G
Microsemi Corporation
MRF5812GR1
Microsemi Corporation
MRF5812GR2
Microsemi Corporation
MRF5812R1
Microsemi Corporation
MRF8372
Microsemi Corporation
MRF8372G
Microsemi Corporation
MRF8372GR1
Microsemi Corporation
MRF8372GR2
Microsemi Corporation
MRF8372R1
Microsemi Corporation
MRF8372R2
Microsemi Corporation
M2GL025TS-1VFG256
Microsemi Corporation
5SGSMD8N1F45C2N
Intel
EP4S40G5H40I2
Intel
5SGXEA4H2F35C2LN
Intel
XC5VLX155T-2FFG1136I
Xilinx Inc.
ICE40UL640-CM36AI
Lattice Semiconductor Corporation
LFE2-20SE-6FN484C
Lattice Semiconductor Corporation
LFE2-35E-6FN484C
Lattice Semiconductor Corporation
5AGXFB1H4F35I3G
Intel
5SGXEA3H2F35C2L
Intel