Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MRF5812G
Manufacturer Part Number | MRF5812G |
---|---|
Future Part Number | FT-MRF5812G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MRF5812G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
Gain | 13dB ~ 15.5dB |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 200mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MRF5812G Weight | Contact Us |
Replacement Part Number | MRF5812G-FT |
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