Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N4448W-HE3-08
Manufacturer Part Number | 1N4448W-HE3-08 |
---|---|
Future Part Number | FT-1N4448W-HE3-08 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N4448W-HE3-08 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 75V |
Current - Average Rectified (Io) | 150mA |
Voltage - Forward (Vf) (Max) @ If | 720mV @ 5mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 4ns |
Current - Reverse Leakage @ Vr | 5µA @ 75V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SOD-123 |
Supplier Device Package | SOD-123 |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N4448W-HE3-08 Weight | Contact Us |
Replacement Part Number | 1N4448W-HE3-08-FT |
V20100SG-M3/4W
Vishay Semiconductor Diodes Division
V20120S-E3/4W
Vishay Semiconductor Diodes Division
V20120S-M3/4W
Vishay Semiconductor Diodes Division
V20120SG-E3/4W
Vishay Semiconductor Diodes Division
V20120SG-M3/4W
Vishay Semiconductor Diodes Division
V20150S-E3/4W
Vishay Semiconductor Diodes Division
V20150S-M3/4W
Vishay Semiconductor Diodes Division
V20150SG-E3/4W
Vishay Semiconductor Diodes Division
V20150SG-M3/4W
Vishay Semiconductor Diodes Division
V30100SG-M3/4W
Vishay Semiconductor Diodes Division
LCMXO1200E-3T100C
Lattice Semiconductor Corporation
MPF300TS-1FCG484I
Microsemi Corporation
EP1S20F672C6
Intel
EPF10K100ABI600-2
Intel
EP3C25F256A7N
Intel
5SGXMA4K2F40C1N
Intel
10CL016ZE144I8G
Intel
5AGXMA3D4F27I3N
Intel
A54SX08A-TQG100
Microsemi Corporation
5CGTFD9C5F23I7N
Intel