Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / V20120SG-M3/4W
Manufacturer Part Number | V20120SG-M3/4W |
---|---|
Future Part Number | FT-V20120SG-M3/4W |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
V20120SG-M3/4W Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 120V |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 1.33V @ 20A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 250µA @ 120V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
V20120SG-M3/4W Weight | Contact Us |
Replacement Part Number | V20120SG-M3/4W-FT |
VS-APU6006-N3
Vishay Semiconductor Diodes Division
VS-APU6006L-M3
Vishay Semiconductor Diodes Division
66PQ040
Vishay Semiconductor Diodes Division
VS-30APF02-M3
Vishay Semiconductor Diodes Division
VS-30APF02PBF
Vishay Semiconductor Diodes Division
VS-30APF04-M3
Vishay Semiconductor Diodes Division
VS-30APF04PBF
Vishay Semiconductor Diodes Division
VS-30APF06-M3
Vishay Semiconductor Diodes Division
VS-30APF06PBF
Vishay Semiconductor Diodes Division
VS-30APF10PBF
Vishay Semiconductor Diodes Division
XC7S25-1FTGB196C
Xilinx Inc.
APA075-PQ208I
Microsemi Corporation
EP2S60F484I4N
Intel
10M25SAE144C8G
Intel
XC4008E-1PC84C
Xilinx Inc.
XC7VX980T-1FFG1930I
Xilinx Inc.
A54SX16A-TQG100
Microsemi Corporation
LCMXO3LF-1300E-6MG121I
Lattice Semiconductor Corporation
10AX115R2F40E2SG
Intel
EPF10K30ABC356-4
Intel