Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / ZXTDC3M832TA
Manufacturer Part Number | ZXTDC3M832TA |
---|---|
Future Part Number | FT-ZXTDC3M832TA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
ZXTDC3M832TA Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 4A, 3A |
Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A |
Current - Collector Cutoff (Max) | 25nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V / 60 @ 1.5A, 2V |
Power - Max | 1W |
Frequency - Transition | 165MHz, 190MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Supplier Device Package | 8-MLP (3x2) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
ZXTDC3M832TA Weight | Contact Us |
Replacement Part Number | ZXTDC3M832TA-FT |
IMX9T110
Rohm Semiconductor
BCM53DSF
Nexperia USA Inc.
BC846DS,115
Nexperia USA Inc.
IMT2AT108
Rohm Semiconductor
IMT4T108
Rohm Semiconductor
PBSS4160DPN,115
Nexperia USA Inc.
PBSS4160DSH
Nexperia USA Inc.
PBSS5160DS,115
Nexperia USA Inc.
SMBTA06UPNE6327HTSA1
Infineon Technologies
BCM847DS,115
Nexperia USA Inc.