Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / XP162A12A6PR-G
Manufacturer Part Number | XP162A12A6PR-G |
---|---|
Future Part Number | FT-XP162A12A6PR-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
XP162A12A6PR-G Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-89 |
Package / Case | TO-243AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
XP162A12A6PR-G Weight | Contact Us |
Replacement Part Number | XP162A12A6PR-G-FT |
TPCC8003-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8005-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage
TPCC8A01-H(TE12LQM
Toshiba Semiconductor and Storage
TPH11006NL,LQ
Toshiba Semiconductor and Storage
TPH1110ENH,L1Q
Toshiba Semiconductor and Storage
TPH1110FNH,L1Q
Toshiba Semiconductor and Storage
TPH12008NH,L1Q
Toshiba Semiconductor and Storage
TPH1R005PL,L1Q
Toshiba Semiconductor and Storage
TPH1R403NL,L1Q
Toshiba Semiconductor and Storage
XC2V250-5FG256I
Xilinx Inc.
M2GL050-FGG484I
Microsemi Corporation
A3P1000-FGG484T
Microsemi Corporation
APA1000-PQ208M
Microsemi Corporation
LCMXO3L-9400C-6BG484C
Lattice Semiconductor Corporation
5SGXEA5K3F35C2L
Intel
XC5VLX50-2FFG1153C
Xilinx Inc.
XC6VLX550T-2FFG1759C
Xilinx Inc.
XCKU035-L1SFVA784I
Xilinx Inc.
5SGXMA3H1F35C2LN
Intel