Home / Products / Integrated Circuits (ICs) / Memory / W987D2HBJX7E
Manufacturer Part Number | W987D2HBJX7E |
---|---|
Future Part Number | FT-W987D2HBJX7E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
W987D2HBJX7E Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - Mobile LPSDR |
Memory Size | 128Mb (4M x 32) |
Clock Frequency | 133MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 5.4ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -25°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 90-TFBGA |
Supplier Device Package | 90-VFBGA (8x13) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
W987D2HBJX7E Weight | Contact Us |
Replacement Part Number | W987D2HBJX7E-FT |
W972GG6JB-3I TR
Winbond Electronics
W972GG6JB25I
Winbond Electronics
W972GG6JB25I TR
Winbond Electronics
W9412G6KH-5
Winbond Electronics
W9425G6KH-5
Winbond Electronics
W9464G6KH-5
Winbond Electronics
W9412G6IH-5
Winbond Electronics
W9412G6JH-4
Winbond Electronics
W9412G6JH-5I
Winbond Electronics
W9412G6KH-4
Winbond Electronics
XC4020XL-1HT144C
Xilinx Inc.
EX64-TQ100A
Microsemi Corporation
A42MX36-1PQ240
Microsemi Corporation
M2GL025T-1FGG484I
Microsemi Corporation
A3PN060-VQ100
Microsemi Corporation
EP20K100EFC144-3
Intel
10CL016YE144C8G
Intel
5SGXEA4K2F35C2L
Intel
LFE2-20SE-5FN256I
Lattice Semiconductor Corporation
10AX090U4F45I3LG
Intel