Home / Products / Integrated Circuits (ICs) / Memory / W632GU8AB-11
Manufacturer Part Number | W632GU8AB-11 |
---|---|
Future Part Number | FT-W632GU8AB-11 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
W632GU8AB-11 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR3 |
Memory Size | 2Gb (128M x 16) |
Clock Frequency | 933MHz |
Write Cycle Time - Word, Page | - |
Access Time | 20ns |
Memory Interface | Parallel |
Voltage - Supply | 1.283V ~ 1.45V |
Operating Temperature | 0°C ~ 95°C (TC) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
W632GU8AB-11 Weight | Contact Us |
Replacement Part Number | W632GU8AB-11-FT |
W25Q64CVSSJP
Winbond Electronics
W25Q64CVSSJP TR
Winbond Electronics
W25Q64CVZPJG
Winbond Electronics
W25Q64CVZPJG TR
Winbond Electronics
W25Q64CVZPJP
Winbond Electronics
W25Q64CVZPJP TR
Winbond Electronics
W25Q64FVSCA1
Winbond Electronics
W25Q64FVSCA2
Winbond Electronics
W25Q64FVSCB1
Winbond Electronics
W25Q64FVSH01
Winbond Electronics
A1020B-VQ80I
Microsemi Corporation
XC4020XL-2HT144C
Xilinx Inc.
A54SX16A-FG256I
Microsemi Corporation
A3PN125-VQG100I
Microsemi Corporation
EP2C35F484I8
Intel
10M08SAU169A7G
Intel
5SGXEA5K1F35C2LN
Intel
5SGXEA4K1F35I2N
Intel
AX1000-1FGG676I
Microsemi Corporation
EPF10K50SQC208-1N
Intel