Home / Products / Integrated Circuits (ICs) / Memory / W632GU6MB-11
Manufacturer Part Number | W632GU6MB-11 |
---|---|
Future Part Number | FT-W632GU6MB-11 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
W632GU6MB-11 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR3 |
Memory Size | 2Gb (128M x 16) |
Clock Frequency | 933MHz |
Write Cycle Time - Word, Page | - |
Access Time | 20ns |
Memory Interface | Parallel |
Voltage - Supply | 1.283V ~ 1.45V |
Operating Temperature | 0°C ~ 95°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 96-VFBGA |
Supplier Device Package | 96-VFBGA (7.5x13) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
W632GU6MB-11 Weight | Contact Us |
Replacement Part Number | W632GU6MB-11-FT |
AT25DF641-S3H-T
Adesto Technologies
LE24L042CS-LV-TFM-E
ON Semiconductor
W9751G6KB-25
Winbond Electronics
W9725G6KB-25
Winbond Electronics
W9725G6KB-25 TR
Winbond Electronics
W9751G6KB25I
Winbond Electronics
W971GG6SB-25
Winbond Electronics
W971GG6SB25I
Winbond Electronics
W972GG6KB-25
Winbond Electronics
W971GG6SB-18
Winbond Electronics
A3P400-1FGG256
Microsemi Corporation
M2GL050S-1VFG400I
Microsemi Corporation
EPF10K10ATC100-3
Intel
EP4CE15F23C7
Intel
A1010B-1PL44I
Microsemi Corporation
XC2VP7-6FFG672I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LCMXO2-4000HE-5FTG256C
Lattice Semiconductor Corporation
5CGTFD7D5F31I7N
Intel
10AX115R1F40E1SG
Intel