Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / VUO110-18NO7
Manufacturer Part Number | VUO110-18NO7 |
---|---|
Future Part Number | FT-VUO110-18NO7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VUO110-18NO7 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Three Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1.8kV |
Current - Average Rectified (Io) | 127A |
Voltage - Forward (Vf) (Max) @ If | 1.13V @ 50A |
Current - Reverse Leakage @ Vr | 100µA @ 1800V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | PWS-E1 |
Supplier Device Package | PWS-E1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VUO110-18NO7 Weight | Contact Us |
Replacement Part Number | VUO110-18NO7-FT |
APTDF100H170G
Microsemi Corporation
APTDF100H20G
Microsemi Corporation
APTDF100H601G
Microsemi Corporation
APTDF200H100G
Microsemi Corporation
APTDF200H120G
Microsemi Corporation
APTDF200H170G
Microsemi Corporation
APTDF30H1201G
Microsemi Corporation
APTDF30H601G
Microsemi Corporation
APTDF60H601G
Microsemi Corporation
APTDR40X1601G
Microsemi Corporation
LCMXO2280E-5TN144C
Lattice Semiconductor Corporation
A3P060-1TQ144I
Microsemi Corporation
XC3S400A-4FG320I
Xilinx Inc.
A1440A-1VQ100I
Microsemi Corporation
AT40K40-2DQI
Microchip Technology
EP1K50FC484-1
Intel
EP20K160EFC484-1
Intel
EP4S100G4F45I2
Intel
XC5VLX110T-2FF1738C
Xilinx Inc.
EP1AGX60DF780C6N
Intel