Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / VS-HFA25TB60HN3
Manufacturer Part Number | VS-HFA25TB60HN3 |
---|---|
Future Part Number | FT-VS-HFA25TB60HN3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFRED® |
VS-HFA25TB60HN3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 25A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 25A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 20µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-HFA25TB60HN3 Weight | Contact Us |
Replacement Part Number | VS-HFA25TB60HN3-FT |
MBR7H60-E3/45
Vishay Semiconductor Diodes Division
MBR7H60HE3/45
Vishay Semiconductor Diodes Division
NS8ATHE3/45
Vishay Semiconductor Diodes Division
NS8ATHE3_A/P
Vishay Semiconductor Diodes Division
NS8BTHE3/45
Vishay Semiconductor Diodes Division
NS8BTHE3_A/P
Vishay Semiconductor Diodes Division
NS8DTHE3/45
Vishay Semiconductor Diodes Division
NS8DTHE3_A/P
Vishay Semiconductor Diodes Division
NS8GTHE3/45
Vishay Semiconductor Diodes Division
NS8GTHE3_A/P
Vishay Semiconductor Diodes Division
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel