Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / VS-GT300YH120N
Manufacturer Part Number | VS-GT300YH120N |
---|---|
Future Part Number | FT-VS-GT300YH120N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-GT300YH120N Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 341A |
Power - Max | 1042W |
Vce(on) (Max) @ Vge, Ic | 2.17V @ 15V, 300A (Typ) |
Current - Collector Cutoff (Max) | 300µA |
Input Capacitance (Cies) @ Vce | 36nF @ 30V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Double INT-A-PAK (3 + 8) |
Supplier Device Package | Double INT-A-PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-GT300YH120N Weight | Contact Us |
Replacement Part Number | VS-GT300YH120N-FT |
FS100R12KT4GB11BOSA1
Infineon Technologies
FS100R12KT4GBOSA1
Infineon Technologies
FS100R12N2T4PBPSA1
Infineon Technologies
FS100R17N3E4B11BOSA1
Infineon Technologies
FS100R17N3E4PB11BPSA1
Infineon Technologies
FS150R07N3E4BOSA1
Infineon Technologies
FS200R06KE3BOSA1
Infineon Technologies
FS200R07N3E4RB11BOSA1
Infineon Technologies
FS200R07N3E4RBOSA1
Infineon Technologies
FS200R12KT4RB11BOSA1
Infineon Technologies
XC2S150E-6FT256I
Xilinx Inc.
XC6SLX75-3FGG676I
Xilinx Inc.
EP3SL70F484C4N
Intel
EP4CGX110CF23C7
Intel
EP2AGX65DF25C6N
Intel
EP3SL110F1152C3
Intel
LFX200EB-04F256C
Lattice Semiconductor Corporation
LFEC33E-4FN672C
Lattice Semiconductor Corporation
LFE3-150EA-9FN1156I
Lattice Semiconductor Corporation
5SGXMA3H3F35I4N
Intel