Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / VS-40EPS12-M3
Manufacturer Part Number | VS-40EPS12-M3 |
---|---|
Future Part Number | FT-VS-40EPS12-M3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-40EPS12-M3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 40A |
Voltage - Forward (Vf) (Max) @ If | 1V @ 20A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247AC Modified |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-40EPS12-M3 Weight | Contact Us |
Replacement Part Number | VS-40EPS12-M3-FT |
VI20100SG-M3/4W
Vishay Semiconductor Diodes Division
VI20120S-E3/4W
Vishay Semiconductor Diodes Division
VI20120S-M3/4W
Vishay Semiconductor Diodes Division
VI20120SG-E3/4W
Vishay Semiconductor Diodes Division
VI20120SG-M3/4W
Vishay Semiconductor Diodes Division
VI20150S-E3/4W
Vishay Semiconductor Diodes Division
VI20150S-M3/4W
Vishay Semiconductor Diodes Division
VI20150SG-E3/4W
Vishay Semiconductor Diodes Division
VI20150SG-M3/4W
Vishay Semiconductor Diodes Division
VI30100S-M3/4W
Vishay Semiconductor Diodes Division
XC6SLX9-L1FT256C
Xilinx Inc.
XCKU040-1FBVA900I
Xilinx Inc.
M2GL010T-1VFG256I
Microsemi Corporation
LCMXO1200E-3FTN256C
Lattice Semiconductor Corporation
10M40DAF256I6G
Intel
XC7A35T-1CSG324C
Xilinx Inc.
LFE2-20E-5F256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4MG132C
Lattice Semiconductor Corporation
10AX115N2F40I2LG
Intel
EP4CE30F29I7
Intel