Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / VS-16CTQ100STRR-M3
Manufacturer Part Number | VS-16CTQ100STRR-M3 |
---|---|
Future Part Number | FT-VS-16CTQ100STRR-M3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-16CTQ100STRR-M3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 8A |
Voltage - Forward (Vf) (Max) @ If | 720mV @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 550µA @ 100V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-16CTQ100STRR-M3 Weight | Contact Us |
Replacement Part Number | VS-16CTQ100STRR-M3-FT |
VBT2060C-E3/4W
Vishay Semiconductor Diodes Division
VBT2060C-E3/8W
Vishay Semiconductor Diodes Division
VBT2060C-M3/4W
Vishay Semiconductor Diodes Division
VBT2060C-M3/8W
Vishay Semiconductor Diodes Division
VBT2060G-E3/4W
Vishay Semiconductor Diodes Division
VBT2060G-E3/8W
Vishay Semiconductor Diodes Division
VBT2080C-E3/8W
Vishay Semiconductor Diodes Division
VBT2080C-M3/4W
Vishay Semiconductor Diodes Division
VBT2080C-M3/8W
Vishay Semiconductor Diodes Division
VBT3045C-E3/4W
Vishay Semiconductor Diodes Division
XC7S6-1FTGB196I
Xilinx Inc.
AX250-1FG256I
Microsemi Corporation
APA750-PQG208
Microsemi Corporation
A3PN030-ZVQ100I
Microsemi Corporation
EP3C16F256C6
Intel
5SGXEA7N3F40C4N
Intel
XC7VX415T-2FFG1158C
Xilinx Inc.
LFEC6E-3F256C
Lattice Semiconductor Corporation
EP1C4F400C8
Intel
EP2AGZ300FF35C4N
Intel