Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / VS-16CTQ100S-M3
Manufacturer Part Number | VS-16CTQ100S-M3 |
---|---|
Future Part Number | FT-VS-16CTQ100S-M3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-16CTQ100S-M3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 8A |
Voltage - Forward (Vf) (Max) @ If | 720mV @ 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 550µA @ 100V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-16CTQ100S-M3 Weight | Contact Us |
Replacement Part Number | VS-16CTQ100S-M3-FT |
VBT2045CBP-E3/4W
Vishay Semiconductor Diodes Division
VBT2045CBP-E3/8W
Vishay Semiconductor Diodes Division
VBT2045CBP-M3/4W
Vishay Semiconductor Diodes Division
VBT2045CBP-M3/8W
Vishay Semiconductor Diodes Division
VBT2060C-E3/4W
Vishay Semiconductor Diodes Division
VBT2060C-E3/8W
Vishay Semiconductor Diodes Division
VBT2060C-M3/4W
Vishay Semiconductor Diodes Division
VBT2060C-M3/8W
Vishay Semiconductor Diodes Division
VBT2060G-E3/4W
Vishay Semiconductor Diodes Division
VBT2060G-E3/8W
Vishay Semiconductor Diodes Division
A1020B-VQ80I
Microsemi Corporation
LCMXO256E-4T100C
Lattice Semiconductor Corporation
XC7S100-L1FGGA676I
Xilinx Inc.
A3P1000L-1FGG484
Microsemi Corporation
AGLN030V2-ZVQ100I
Microsemi Corporation
EP1K50FC484-2
Intel
EP3SE80F1152C4L
Intel
EP4SE820H35I3N
Intel
XC7VX415T-2FFG1927I
Xilinx Inc.
5CGXFC4C6M13C7N
Intel