Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / VN0104N3-G-P013
Manufacturer Part Number | VN0104N3-G-P013 |
---|---|
Future Part Number | FT-VN0104N3-G-P013 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VN0104N3-G-P013 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 65pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VN0104N3-G-P013 Weight | Contact Us |
Replacement Part Number | VN0104N3-G-P013-FT |
ZVN4206A
Diodes Incorporated
BS270
ON Semiconductor
ZVN2110ASTZ
Diodes Incorporated
ZVN0124A
Diodes Incorporated
ZVP2110ASTZ
Diodes Incorporated
VN10LP
Diodes Incorporated
ZVP2110A
Diodes Incorporated
ZVP2106ASTZ
Diodes Incorporated
ZVN3310A
Diodes Incorporated
ZVN4206AV
Diodes Incorporated
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel